 | 书 名: 模拟电路版图的艺术（英文影印版）
作 者: Alan Hastings
出 版 社: 清华大学出版社
ISBN : 730208226
原 价: ￥72
 有一家网站低于85折正在热销 | 模拟电路版图的艺术（英文影印版）-图书目录:
Preface xvii
Acknowledgments xix
1 Device Physics
1.1 Semiconductors 1
1.1.1 Generation and Recombination
1.1.2 Extrinsic Semiconductors 6
1.1.3 Diffusion and Drift 9
1.2 PNJunctions 10
1.2.1 Depletion Regions 10
1.2.2 PN Diodes 13
1.2.3 Schottky Diodes 15
1.2.4 Zener Diodes 17
1.2.5 Ohmic Contacts 19
1.3 Bipolar Junction Transistors 20
1.3.1 Beta 22
1.3.2 I-V Characteristics 23
1.4 MOS Transistors 24
1.4.1 Threshold Voltage 27
1.4.2 I-V Characteristics 29
1.5 JFETTransistors 31
1.6 Summary 33
1.7 Exercises 34
2 Semiconductor Fabrication
2.1 Silicon Manufacture 36
2.1.1 Crystal Growth 37
2.1.2 Wafer Manufacturing 38
2.1.3 The Crystal Structure of Silicon 38
2.2 Photolithography 40
2.2.1 Photoresists 40
2.2.2 Photomasks and Reticles 41
2.2.3 Patterning 42
2.3 Oxide Growth and Removal 42
2.3.1 Oxide Growth and Deposition 43
2.3.2 Oxide Removal 44
2.3.3 Other Effects of Oxide Growth and Removal 46
2.3.4 Local Oxidation of Silicon LOCOS
48
2.4 Diffusion and Ion Implantation 49
2.4.1 Diffusion 50
2.4.2 Other Effects of Diffusion 52
2.4.3 Ion Implantation 53
2.5 Silicon Deposition 55
2.5.1 Epitaxy 56
2.5.2 Polysilicon Deposition 58
2.6 Metallization 58
2.6.1 Deposition and Removal of Aluminum 59
2.6.2 Refractory Barrier Metal 60
2.6.3 Silicidation 62
2.6.4 Interlevel Oxide, Interlevel Nitride, and Protective Overcoat 63
2.7 Assembly 64
2.7.1 Mount and Bond 66
2.7.2 Packaging 69
2.8 Summary 69
2.9 Exercises 69
3 Representative Processes
3.1 Standard Bipolar 72
3.1.1 Essential Features 72
3.1.2 Fabrication Sequence 73
Starting Material 73
N-Buried Layer 73
Epitaxial Growth 74
Isolation Diffusion 74
Deep-N
74
Base Implant 75
Emitter Diffusion 75
Contact 76
Metallization 76
Protective Overcoat 77
3.1.3 Available Devices 77
NPN Transistors 77
PNP Transistors 79
Resistors 81
Capacitors 83
3.1.4 Process Extensions 84
Up-down Isolation 84
Double-level Metal 84
Schottky Diodes 85
High-Sheet Resistors 86
Super-beta Transistors 86
3.2 Polysilicon-Gate CMOS 87
3.2.1 Essential Features 88
3.2.2 Fabrication Sequence 89
Starting Material 89
Epitaxial Growth 89
N-well Diffusion 89
Inverse Moat 90
Channel Stop Implants 90
LOCOS Processing and Dummy Gate Oxidation 91
Threshold Adjust 92
Polysilicon Deposition and Patterning 93
Source/Drain Implants 93
Contacts 94
Metallization 94
Protective Overcoat 94
3.2.3 Available Devices 95
NMOS Transistors 95
PMOS Transistors 97
Substrate PNP Transistors 98
Resistors 98
Capacitors 100
3.2.4 Process Extensions 100
Double-level Metal 100
Silicidation 101
Lightly Doped Drain LDD Transistors 101
Extended-Drain, High-Voltage Transistors 103
3.3 Analog BiCMOS 104
3.3.1 Essential Features 104
3.3.2 Fabrication Sequence 106
Starting Material 106
N-buried Layer 106
Epitaxial Growth 106
N-well Diffusion and Deep-N
107
Base Implant 107
Inverse Moat 108
Channel Stop Implants 108
LOCOS Processing and Dummy Gate Oxidation 108
Threshold Adjust 109
Polysilicon Deposition and Pattern 109
Source/Drain Implants 109
Metallization and Protective Overcoat 110
Process Comparison 110
3.3.3 Available Devices 111
NPN Transistors 112
PNP Transistors 112
Resistors 115
3.4 Summary 115
3.5 Exercises 116
4 Failure Mechanisms
4.1 Electrical Overstress 118
4.1.1 Electrostatic Discharge ESD
118
Effects 120
Preventative Measures 120
4.1.2 Electromigration 121
Effects 121
Preventative Measures 122
4.1.3 The Antenna Effect 122
4.2 Contamination 124
4.2.1 Dry Corrosion 124
Effects 124
Preventative Measures 125
4.2.2 Mobile Ion Contamination 125
Effects 125
Preventative Measures 126
4.3 Surface Effects 128
4.3.1 Hot Carrier Injection 128
Effects 128
Preventative Measures 130
4.3.2 Parasitic Channels and Charge Spreading 131
Effects 131
Preventative Measures Standard Bipolar
133
Preventative Measures CMOS and BiCMOS
137
4.4 Parasitics 139
4.4.1 Substrate Debiasing 140
Effects 140
Preventative Measures 142
4.4.2 Minority-Carrier Injection 143
Effects 143
Preventative Measures Substrate Injection
146
Preventative Measures Cross-injection
151
4.5 Summary 153
4.6 Exercises 153
5 Resistors
5.1 Resistivity and Sheet Resistance 156
5.2 Resistor Layout 158
5.3 Resistor Variability 162
5.3.1 Process Variation 162
5.3.2 Temperature Variation 163
5.3.3 Nonlinearity 163
5.3.4 Contact Resistance 166
5.4 Resistor Parasitics 167
5.5 Comparison of Available Resistors 170
5.5.1
Base Resistors 170
5.5.2
Emitter Resistors 171
5.5.3
Base Pinch Resistors 172
5.5.4
High-Sheet Resistors 173
5.5.5 Epi Pinch Resistors 175
5.5.6
Metal Resistors 176
5.5.7
Poly Resistors 177
5.5.8 NSD andPSD Resistors 180
5.5.9 N-well Resistors 180
5.5.10 Thin-film Resistors 181
5.6 Adjusting Resistor Values 182
5.6.1
Tweaking Resistors 182
Sliding Contacts 183
Sliding Heads 184
Trombone Slides 184
Metal Options 184
5.6.2 Trimming Resistors 185
Fuses 185
Zener Zaps 189
Laser Trims 190
5.7 Summary 191
5.8 Exercises 192
6 Capacitors
6.1 Capacitance 194
6.2 Capacitor Variability 200
6.2.1
Process Variation 200
6.2.2
Voltage Modulation and Temperature Variation 201
6.3 Capacitor Parasitics 203
6.4 Comparison of Available Capacitors 205
6.4.1
Base-emitter Junction Capacitors 205
6.4.2 MOS Capacitors 207
6.4.3
Poly-poly Capacitors 209
6.4.4 Miscellaneous Styles of Capacitors 211
6.5 Summary 212
6.6 Exercises 212
7 Matching of Resistors and Capacitors
7.1 Measuring Mismatch 214
7.2 Causes of Mismatch 217
7.2.1
Random Statistical Fluctuations 217
7.2.2 Process Biases 219
7.2.3 Pattern Shift 220
7.2.4
Variations in Polysilicon Etch Rate 222
7.2.5
Diffusion Interactions 224
7.2.6
Stress Gradients and Package Shifts 226
Piezoresistivity 227
Gradients and Centroids 229
Common-centroid Layout 231
Location and Orientation 235
7.2.7
Temperature Gradients andThermoelectrics 236
Thermal Gradients 238
Thermoelectric Effects 240
7.2.8 Electrostatic Interactions 242
Voltage Modulation 242
Charge Spreading 245
Dielectric Polarization 246
Dielectric Relaxation 248
7.3 Rules for Device Matching 249
7.3.1
Rules for Resistor Matching 249
7.3.2
Rules for Capacitor Matching 253
7.4 Summary 257
7.5 Exercises 257
8 Bipolar Transistors
8.1 Topics in Bipolar Transistor Operation 260
8.1.1 Beta Rolloff 262
8.1.2 Avalanche Breakdown 262
8.1.3 Thermal Runaway and Secondary Breakdown 264
8.1.4 Saturation in NPNTransistors 266
8.1.5 Saturation in Lateral PNPTransistors 270
8.1.6 Parasitics of Bipolar Transistors 272
8.2 Standard Bipolar Small-signal Transistors 274
8.2.1 The Standard Bipolar NPN Transistor 274
Construction of Small-signal NPN Transistors 276
8.2.2 The Standard Bipolar Substrate PNPTransistor 279
Construction of Small-signal Substrate PNP Transistors 281
8.2.3 The Standard Bipolar Lateral PNP Transistor 283
Construction of Small-signal Lateral PNP Transistors 285
8.2.4 High-voltage Bipolar Transistors 291
8.3. Alternative Small-signal Bipolar Transistors 293
8.3.1 Extensions to Standard Bipolar 293
8.3.2 Analog BiCMOS Bipolar Transistors 294
8.3.3 Bipolar Transistors in a CMOS Process 297
8.3.4 Advanced-technology Bipolar Transistors 299
8.4 Summary 302
8.5 Exercises 303
9 Applications of Bipolar Transistors
9.1
Power Bipolar Transistors 306
9.1.1 Failure Mechanisms of NPN Power Transistors 307
Emitter Debiasing 307
Thermal Runaway and Secondary Breakdown 309
9.1.2 Layout of Power NPNTransistors 311
The Interdigitated-emitter Transistor 311
The Wide-emitter Narrow-contact Transistor 314
The Christmas-tree Device 315
The Cruciform-emitter Transistor 316
Power Transistor Layout in Analog BiCMOS 317
Selecting a Power Transistor Layout 318
9.1.3 Saturation Detection and Limiting 319
9.2
Matching Bipolar Transistors 322
9.2.1 Random Variations 323
9.2.2 Emitter Degeneration 325
9.2.3 NBLShadow 327
9.2.4 Thermal Gradients 328
9.2.5 Stress Gradients 332
9.3
Rules for Bipolar Transistor Matching 334
9.3.1 Rules for Matching NPN Transistors 335
9.3.2 Rules for Matching Lateral PNP Transistors 337
9.4
Summary 340
9.5
Exercises 340
10 Diodes
10.1 Diodesin Standard Bipolar 343
10.1.1. Diode-connectedTransistors 343
10.1.2 Zener Diodes 346
Surface Zener Diodes 347
Buried Zeners 349
10.1.3 SchottkyDiodes 352
10.2 Diodes in CMOS and BiCMOS Processes 356
10.3 Matching Diodes 359
10.3.1 Matching PN Junction Diodes 359
10.3.2 Matching Zener Diodes 360
10.3.3 MatchingSchottky Diodes 361
10.4 Summary 362
10.5 Exercises 362
11 MOS Transistors
11.1 Topics in MOS Transistor Operation 364
11.1.1 Modeling the MOS Transistor 364
Device Transconductance 365
Threshold Voltage 367
11.1.2 Parasitics of MOS Transistors 370
Breakdown Mechanisms 372
CMOS Latchup 375
11.2 Self-aligned Poly-Gate CMOS Transistors 376
11.2.1 Coding the MOS Transistor 377
Width and Length 378
11.2.2 N-well and P-well Processes 379
11.2.3 Channel Stops 381
11.2.4 Threshold Adjust Implants 383
11.2.5 Scaling the Transistor 386
11.2.6 Variant Structures 388
Serpentine Transistors 391
Annular Transistors 391
11.2.7 Backgate Contacts 393
11.3 Summary 396
11.4 Exercises 396
12 Applications of MOS Transistors
12.1 Extended-voltage Transistors 399
12.1.1 LDD and DDD Transistors 400
12.1.2 Extended-drain Transistors 403
Extended-drain NMOS Transistors 403
Extended-drain PMOS Transistors 405
12.1.3 Multiple Gate Oxides 405
12.2 Power MOS Transistors 407
Thermal Runaway 407
Secondary Breakdown 408
Rapid Transient Overload 408
MOS Switches versus Bipolar Switches 409
12.2.1 Conventional MOS Power Transistors 410
The Rectangular Device 411
The Diagonal Device 413
Computation of RM 413
Other Considerations 414
Nonconventional Structures 416
12.2.2 DMOSTransistors 417
The Lateral DMOS Transistor 418
The DMOS NPN 420
12.3 The JFETTransistor 422
12.3.1 Modeling the JFET 422
12.3.2 JFETLayout 423
12.4 MOS Transistor Matching 426
12.4.1 Geometric Effects 427
Gate Area 428
Gate Oxide Thickness 428
Channel Length Modulation 429
Orientation 429
12.4.2 Diffusion and Etch Effects 430
Polysilicon Etch Rate Variations 430
Contacts OverActive Gate 431
Diffusions Near the Channel 432
PMOS versus NMOS Transistors 432
12.4.3 Thermal and Stress Effects 433
Oxide Thickness Gradients 433
Stress Gradients 433
Metallization-induced Stresses 434
Thermal Gradients 434
12.4.4 Common-centroid Layout of MOS Transistors 435
12.5 Rules for MOS Transistor Matching 439
12.6 Summary 442
12.7 Exercises 443
13 Special Topics
13.1 Merged Devices 445
13.1.1 Flawed Device Mergers 446
13.1.2 Successful Device Mergers 450
13.1.3 Low-risk Merged Devices 452
13.1.4 Medium-risk Merged Devices 453
13.1.5 Devising New Merged Devices 455
13.2 Guard Rings 455
13.2.1 Standard Bipolar Electron Guard Rings 456
13.2.2 Standard Bipolar Hole Guard Rings 457
13.2.3 Guard Rings in CMOS and BiCMOS Designs 458
13.3 Single-level Interconnection 460
13.3.1 Mock Layouts and Stick Diagrams 461
13.3.2 Techniques for Crossing Leads 463
13.3.3 Types of Tunnels 464
13.4 Constructing the Padring 466
13.4.1 Scribe Streets and Alignment Markers 466
13.4.2 Bondpads, Trimpads, and Testpads 468
13.4.3 ESD Structures 471
Zener Clamp 473
Two-stage Zener Clamps 475
Buffered Zener Clamp 476
VCES Clamp 478
VCES Clamp 479
Antiparallel Diode Clamps 480
Additional ESD Structures for CMOS Processes 480
13.4.4 Selecting ESD Structures 483
13.5 Exercises 485
14 Assembling the Die
14.1 Die Planning 488
14.1.1 Cell Area Estimation 489
Resistors 489
Capacitors 489
Vertical Bipolar Transistors 489
Lateral PNP Transistors 490
MOS Transistors 490
MOS Power Transistors 490
Computing Cell Area 491
14.1.2 Die Area Estimation 491
14.1.3 Gross Profit Margin 494
14.2 Floorplanning 495
14.3 Top-level Interconnection 500
14.3.1 Principles of Channel Routing 501
14.3.2 Special Routing Techniques 503
Kelvin Connections 503
Noisy Signals and Sensitive Signals 504
14.3.3 Electromigration 506
14.3.4 Minimizing Stress Effects 508
14.4 Conclusion 510
14.5 Exercises 510
Appendices
A. Table of Acronyms Used in the Text 513
B. The Miller Indices of a Cubic Crystal 516
C. Sample Layout Rules 519
D. Mathematical Derivations 527
E. Sources for Layout Editor Software 532
Index 533
模拟电路版图的艺术（英文影印版）-图书简介:
本书是第一本有关模拟版图设计的教科书，内容全面，实践性强，是作者三十余年研究、设计实践经验的积累和总结。本书涉及了模拟集成电路设计中的3种工艺：标准双极工艺、CMOS硅栅工艺和BiCMOS工艺，通过这些介绍，读者可以容易地了解其他新的工艺。本书阐述了版图设计中许多非常重要的方?妫绻收匣浦械腅SD和闩锁、匹配原理、器件的联合、保护环以及高压器件等，对许多实际问题都给出了解决方案；另外对于版图设计的一些背景知识也给予了非常简明易懂的介绍，包括器件物理、工艺、故障模型等。
本书的主要特点是：（1）实用性强，基于作者丰富的实践经验，本书讨论了许多鲜为人知的机制和效应，介绍了目前业界最前沿的知识和技术；（2）易读易懂，本书的数学内容极少，读者只要具备基本代数和基础电子学的知识就可以读懂；（3）为方便读者，书中包括了许多有用的背景知识；（4）为理解器件运行（operation ），作者提出了一个直观模型carrier-based model来代替传统的component-based model；（5）本书还提供了大量的习题，读者可以通过设计软件来完成，也可以直接计算完成。
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